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Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon

Published online by Cambridge University Press:  31 January 2011

W. Wijaranakula ,
P.M. Burke ,
L. Forbes  and
J.H. Matlock
W. Wijaranakula
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
P.M. Burke
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
L. Forbes
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
J.H. Matlock
Affiliation:
SEH America, Incorporated, 4111 Northeast, 112th Avenue, Vancouver, Washington 98662
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Abstract

Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.

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Type
Articles
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Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 698 - 704
Copyright
Copyright © Materials Research Society 1986

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References

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