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Density-controlled growth of aligned ZnO nanowire arrays by seedless chemical approach on smooth surfaces

Published online by Cambridge University Press:  31 January 2011

Sheng Xu ,
Changshi Lao ,
Benjamin Weintraub  and
Zhong Lin Wang
Sheng Xu
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Changshi Lao
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Benjamin Weintraub
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Zhong Lin Wang*
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
*
a)Address all correspondence to this author. e-mail: zhong.wang@mse.gatech.edu
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Abstract

A novel ZnO seedless chemical approach for density-controlled growth of ZnO nanowire (NW) arrays has been developed. The density of ZnO NWs is controlled by changing the precursor concentration. Effects of both growth temperature and growth time are also investigated. By this novel synthesis technique, ZnO NW arrays can grow on any substrate (polymer, glass, semiconductor, metal, and more) as long as the surface is smooth. This technique represents a new, low-cost, time-efficient, and scalable method for fabricating ZnO NW arrays for applications in field emission, vertical field effect transistor arrays, nanogenerators, and nanopiezotronics.

Keywords

Nanostructure
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 8 , August 2008 , pp. 2072 - 2077
Copyright
Copyright © Materials Research Society 2008

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References

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