Hostname: page-component-7dd5485656-wlg5v Total loading time: 0 Render date: 2025-10-31T01:14:19.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect structure of laser deposited Y-Ba-Cu-O thin films on single crystal MgO substrate

Published online by Cambridge University Press:  31 January 2011

R. Ramesh ,
D. M. Hwang ,
J. B. Barner ,
L. Nazar ,
T. S. Ravi ,
A. Inam ,
B. Dutta ,
X. D. Wu  and
T. Venkatesan
R. Ramesh
Affiliation:
Bellcore, Red Bank, New Jersey 07701
D. M. Hwang
Affiliation:
Bellcore, Red Bank, New Jersey 07701
J. B. Barner
Affiliation:
Bellcore, Red Bank, New Jersey 07701
L. Nazar
Affiliation:
Bellcore, Red Bank, New Jersey 07701
T. S. Ravi
Affiliation:
Bellcore, Red Bank, New Jersey 07701
A. Inam
Affiliation:
Bellcore, Red Bank, New Jersey 07701
B. Dutta
Affiliation:
Bellcore, Red Bank, New Jersey 07701
X. D. Wu
Affiliation:
Bellcore, Red Bank, New Jersey 07701
T. Venkatesan
Affiliation:
Bellcore, Red Bank, New Jersey 07701
Get access

Abstract

Structural defects in thin films of nominal composition YBa2Cu3O7 (123) grown on single crystal MgO have been characterized. The main types of stacking defects correspond to the cationic stoichiometries of “248”, “247”, and “224”. Several types of edge dislocations have been observed. Due to the frequent changes in the stacking sequence, antiphase boundaries are created to accommodate the misfit across regions in which the repeat sequence is not identical. The films exhibit a mosaic microstructure due to the formation of grain boundaries in the a-b plane.

Information

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 4 , April 1990 , pp. 704 - 716
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Bednorz, J.G. and Muller, K. A., Z.Phys. B64, 189, (1986).CrossRefGoogle Scholar
2Wu, M. K., Ashburn, J. R., Torng, C. J., Hor, P. H., Meng, R. L., Gao, L., Huang, Z. J., Wang, Y. Q., and Chu, C.W., Phys. Rev. Lett. 58, 908 (1987).CrossRefGoogle Scholar
3Maeda, H., Tanaka, Y., Fukutomi, M., and Asano, T., Jpn. J. Appl. Phys. Lett. 27, L209 (1988); Z.Z. Sheng and A.M. Hermann, Nature 332, 138(1988).CrossRefGoogle Scholar
4Dutta, B., Wu, X.D., Inam, A., and Venkatesan, T., Solid State Technology, 106–110 (Feb. 1989) and the references cited therein.Google Scholar
5Campbell, A. M. and Evetts, J. E., in “Critical Currents in Superconductors”, Monographs on Physics, edited by Coles, B. R. (Taylor and Francis, London, 1972).Google Scholar
6Inam, A., Wu, X.D., Nazar, L., Hegde, M.S., Rogers, C.T., Venkatesan, T., Simon, R.W., Daly, K., Padamsee, H., Kirchgessner, J., Moffat, D., Rubin, D., Shu, Q. S., Kalokitis, D., Fathy, A., Pendrick, V., Brown, R., Brycki, B., Belohoubek, E., Drabeck, L., Gruner, G., Hammond, R., Gamble, F., Lairson, B. M., and Bravman, J. C., submitted to Appl. Phys. Lett.Google Scholar
7Tietz, L.A., Carter, C. B., Lathrop, D. K., Russek, S.E., Buhrman, R.A., and Michael, J. R., Journal of Materials Research 4 (5), 1072 (1989).CrossRefGoogle Scholar
8Chang, J., Nakajima, M., Yamamoto, K., and Sayama, A., Appl. Phys. Lett. 54, 2349 (1989); D. M. Hwang T. Venkatesan, C.C. Chang, L. Nazar, X.D. Wu, A. Inam, and M.S. Hegde, Appl. Phys. Lett. 54, 1702 (1989).CrossRefGoogle Scholar
9Ramesh, R., Hwang, D. M., Venkatesan, T., Ravi, T.S., Nazar, L., Inam, A., Wu, X. D., Dutta, B., Thomas, G., Marshall, A. F., and Geballe, T. H., Science 247, 57 (1990).CrossRefGoogle Scholar
10Ramesh, R., Hwang, D. M., Ravi, T.S., Chang, C.C., Barner, J., Nazar, L., Dutta, B., Wu, X.D., and Venkatesan, T., to be submitted to J. of Appl. Phys.Google Scholar
MacTempas is a computer program for the simulation of high resolution transmission electron microscope images and is a registered trademark of R. Kilaas, c/o Total Resolution, Berkeley, CA 94707.Google Scholar
12Zandbergen, H.W., Gronsky, R., Wang, K., and Thomas, G., Nature 331, 596 (1988).CrossRefGoogle Scholar
13Marshall, A. F., Barton, R.W., Char, K., Kapitulnik, A., Oh, B., Hammond, R. H., and Ladermann, S.S., Phys. Rev. B 37, 9353 (1988); K. Char, M. Lee, R.W. Barton, A. F. Marshall, I. Bozovic, R. H. Hammond, M. R. Beasley, and T. H. Geballe, Phys. Rev. B38, 834 (1988).CrossRefGoogle Scholar
14Fischer, P., Karpinski, J., Kaldis, E., Jilek, E., and Rusiecki, S., Solid State Commun. 69, 531 (1989); J. Karpinski, E. Kaldis, E. Jilek, S. Rusiecki, and B. Bucher, Nature 336, 660 (1988).CrossRefGoogle Scholar
15Ourmazd, A., Rentschler, J. A., Spence, J. C.H., O'Keefe, M., Graham, R. J., Johnson, D.W. Jr., and Rhodes, W.W., Nature 327, 308(1987).CrossRefGoogle Scholar
16O'Keefe, M. and Hansen, S., J. Am. Chem. Soc. 110, 1506 (1988).CrossRefGoogle Scholar
17Bohlmann, W., Crystal Defects and Crystalline Interfaces (Springer-Verlag, Berlin, 1970).CrossRefGoogle Scholar
18Dimos, D., Chaudhari, P., Mannhart, J., and LeGoues, F. K., Phys. Rev. Lett. 61, 219 (1988).CrossRefGoogle Scholar