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Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers

Published online by Cambridge University Press:  31 January 2011

C. K. Moon ,
H. J. Song ,
J. K. Kim ,
J. H. Park ,
S. J. Jang ,
J-B. Yoo ,
H-R. Park  and
Byung-Teak Lee
C. K. Moon
Affiliation:
Department of Physics, Chonnam National University, Kwangju 500-757, Korea
H. J. Song
Affiliation:
Department of Physics, Chonnam National University, Kwangju 500-757, Korea
J. K. Kim
Affiliation:
Department of Physics, Chonnam National University, Kwangju 500-757, Korea
J. H. Park
Affiliation:
Department of Physics, Dongshin University, Naju, Chonranamdo, Korea
S. J. Jang
Affiliation:
Department of Physics, Dongshin University, Naju, Chonranamdo, Korea
J-B. Yoo
Affiliation:
Department of Materials Science Engineering, Sungkyunkwan University, Suwon, Kyongkido, Korea
H-R. Park
Affiliation:
Department of Physics, Mokpo National University, Mokpo, Chonranamdo, Korea
Byung-Teak Lee
Affiliation:
Department of Materials Science Engineering, Chonnam National University, Kwangju 500-757, Korea
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Abstract

Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 24 - 27
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Lee, B-T., Kim, D-K., Moon, C.K., Kim, J.K., Seo, Y.H., Nahm, K.S., Lee, H.J., Lee, K-W., Yu, K-S., Kim, Y., and Jang, S.J., J. Mater. Res. 14, 24 (1999).CrossRefGoogle Scholar
2.Bahng, W. and Kim, H.J., Appl. Phys. Lett. 69, 4053 (1996).CrossRefGoogle Scholar
3.Seo, Y.H., Kim, K.C., Shim, H.W., Nahm, K.S., Suh, E-K., Lee, H.J., Kim, D-K., and Lee, B-T., J. Electrochemical Soc. 145, 292 (1998).CrossRefGoogle Scholar
4.Moon, C.K., Lee, B-T., Kim, J.K., Park, J.H., Jang, S.J., and Yoo, J.B., UngYong Mulli 12, 224 (1999).Google Scholar
5.Camassel, J., Dezauzier, C., DiCioccio, L., Stoemenos, J., Bluet, J.M., Contreras, S., Robert, J.L., and Billon, T., Institute of Physics Conference Series 142, 453 (1996).Google Scholar
6.Cao, J., Pavlidis, D., Eisenbach, A., Philippe, A., Bru-Chevallier, C., and Gulliot, G., Appl. Phys. Lett. 71, 3880 (1997).CrossRefGoogle Scholar
7.Kordina, O., Bjorketun, L-O., Hallin, C., Glass, R.C., Hultman, L., Sundgren, J-E., and Janzen, E., J. Cryst. Growth 154, 303 (1995).CrossRefGoogle Scholar
8.Freund, L.B. and Nix, W.D., Appl. Phys. Lett. 69, 173 (1996).CrossRefGoogle Scholar