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Chemical process to normalize the electrical properties of a-Se

Published online by Cambridge University Press:  03 March 2011

S. S. Badesha ,
M. A. Abkowitz  and
F. E. Knier
S. S. Badesha
Affiliation:
Xerox Webster Research Center, Xerox Corporation, 800 Phillips Road, 0114-39D, Webster, New York, 14580
M. A. Abkowitz
Affiliation:
Xerox Webster Research Center, Xerox Corporation, 800 Phillips Road, 0114-39D, Webster, New York, 14580
F. E. Knier
Affiliation:
Xerox Webster Research Center, Xerox Corporation, 800 Phillips Road, 0114-39D, Webster, New York, 14580
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Abstract

The influence of specific chemical dopants on the electrophotographic behavior of selenium and its alloys has been established in prior work. This communication describes a chemical procedure that has been found effective in removing electronically active impurities from amorphous selenium. The methodology involves converting contaminated selenium into a chemical intermediate that is separated by selective alcoholic dissolution and then reduced to high-purity selenium. The electrical characteristics of the amorphous films obtained by vacuum evaporation of the latter are determined directly from analysis of xerographic potentials.

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Type
Rapid Communications
Information
Journal of Materials Research , Volume 1 , Issue 1 , February 1986 , pp. 10 - 11
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1Mott, N. F. and Davis, E. A., Electronic Processes in non-Crystalline Materials (Clarendon, Oxford, 1979), 2nd ed.Google Scholar
2Abkowitz, M. and Jansen, F., J. Non-Cryst. Solids 59, 953 (1983).CrossRefGoogle Scholar
3Abkowitz, M., Jansen, F., and Melnyk, A. R., Philos. Mag. B 51, 405 (1985).CrossRefGoogle Scholar
4Mott, N. F., Philos. Mag. 34, 1011 (1976).Google Scholar
5Kastner, M., Philos. Mag. B 37, 127 (1978).CrossRefGoogle Scholar
6Janghorbani, M., Ting, B. T. G, and Young, V. R., Am. J. Clin. Nutr. 34, 2816 (1981).CrossRefGoogle Scholar
7Badesha, S. S., Monczka, P., and Smith, S. D., Can. J. Chem. 61, 2199 (1983); Badesha, S. S., Canadian Patent No. 1178026 (1984).CrossRefGoogle Scholar
8Badesha, S. S., Smith, S. D., and Kowalczyk, L. E., Proceedings of 3rd International Symposium on Industrial Uses of Selenium and Tellurium, Stockholm, Sweden (Selenium Tellurium Development Association Inc., Darian, CT, 1984), p. 78; Badesha, S. S., U. S. Patent No. 4,530,718 (1985).Google Scholar
9Abkowitz, M. and Enck, R. C., Phys. Rev. B 25, 2567 (1982).CrossRefGoogle Scholar
10Oda, O., Onozuka, A., and Isuboya, I., in Ref. 8, p. 364; Oda, O., Onozuka, A., and Isuboya, I., J. Non-Cryst. Solids (submitted for publication, 1985).Google Scholar
11Abkowitz, M., Badesha, S. S., and Knier, F. E., Solid State Commun. (to be published).Google Scholar
12Abkowitz, M., J. Chem. Phys. 46, 4537 (1967).CrossRefGoogle Scholar