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Characteristics of conductive SrRuO3 thin films with different microstructures

Published online by Cambridge University Press:  31 January 2011

Q. X. Jia ,
F. Chu ,
C. D. Adams ,
X. D. Wu ,
M. Hawley ,
J. H. Cho ,
A. T. Findikoglu ,
S. R. Foltyn ,
J. L. Smith  and
T. E. Mitchell
Q. X. Jia
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
F. Chu
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
C. D. Adams
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
X. D. Wu
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
M. Hawley
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. H. Cho
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
A. T. Findikoglu
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
S. R. Foltyn
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. L. Smith
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T. E. Mitchell
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Conductive SrRuO3 thin films were epitaxially grown on (100) LaAlO3 substrates by pulsed laser deposition over a temperature range from 650 °C to 825 °C. Well-textured films exhibiting a strong orientation relationship to the underlying substrate could be obtained at a deposition temperature as low as 450 °C. The degree of crystallinity of the films improved with increasing deposition temperature as confirmed by x-ray diffraction, transmission electron microscopy, and scanning tunneling microscopy. Scanning electron microscopy revealed no particulates on the film surface. The resistivity of the SrRuO3 thin films was found to be a strong function of the crystallinity of the film and hence the substrate temperature during film deposition. A residual resistivity ratio (RRR = ρ300 K/ρ4.2 K) of more than 8 was obtained for the SrRuO3 thin films deposited under optimized processing conditions.

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Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 9 , September 1996 , pp. 2263 - 2268
Copyright
Copyright © Materials Research Society 1996

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References

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