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Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe2

Published online by Cambridge University Press:  31 January 2011

Olof Hellman ,
Shun-ichiro Tanaka ,
Shigeru Niki  and
Paul Fons
Olof Hellman
Affiliation:
Tanaka SolidJunction Project/ERATO, Research Development Corporation of Japan, 1–1–1 Fukuura, Kanazawa-ku, Yokohama 236, Japan
Shun-ichiro Tanaka
Affiliation:
Tanaka SolidJunction Project/ERATO, Research Development Corporation of Japan, 1–1–1 Fukuura, Kanazawa-ku, Yokohama 236, Japan
Shigeru Niki
Affiliation:
Optoelectronics Division, ElecTroTechnical Laboratory, 1–1–4 Umezono Tsukuba, Ibaraki 305, Japan
Paul Fons
Affiliation:
Optoelectronics Division, ElecTroTechnical Laboratory, 1–1–4 Umezono Tsukuba, Ibaraki 305, Japan
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Abstract

Using transmission electron microscopy, we have found stacking faults on the cation sublattice in the chalcopyrite structure of CuInSe2. These films are grown by molecular beam epitaxy under Cu-rich conditions. These stacking faults are found to extend large distances in the plane of the film, and are not found to be present in samples not grown in Cu-rich conditions. We suggest that this defect is triggered by a Cu-induced transformation of the surface structure of the growing film.

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Type
Articles
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Journal of Materials Research , Volume 11 , Issue 6 , June 1996 , pp. 1398 - 1402
Copyright
Copyright © Materials Research Society 1996

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References

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