Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-11T12:50:24.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic force microscope investigation of the thermal stability of thin TiSi2 films

Published online by Cambridge University Press:  31 January 2011

Alberto V. Amorsolo Jr. ,
Paul D. Funkenbusch  and
Alan M. Kadin
Alberto V. Amorsolo Jr.
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627
Paul D. Funkenbusch
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627
Alan M. Kadin
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
Get access

Extract

The thermal stability of TiSi2 films on Si has been studied using the atomic force microscope (AFM). Changes in the surface roughness, film morphology, and sheet resistance were monitored during a series of rapid thermal annealing treatments. A linear increase of the root-mean-square (rms) roughness with time was observed during the early stages of degradation, in agreement with a surface diffusion model of thermal grooving, followed by an apparent saturation roughness that was attributed to the effective rupture of the film.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1938 - 1949
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Winnerl, J., in Silicides, Germanides and their Interfaces, edited by Fathauer, R. W., Mantl, S., Schowalter, L. J., and Tu, K. N. (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 37.Google Scholar
2.Ogawa, S., Yoshida, T., and Kouzaki, T., Appl. Phys. Lett. 56, 725 (1990).CrossRefGoogle Scholar
3.Chen, J. F., Chen, L. J., and Lur, W., Nucl. Instrum. Methods B96, 361 (1995).CrossRefGoogle Scholar
4.Clevenger, L. A. and Mann, R. W., in Silicides, Germanides and Their Interfaces, edited by Fathauer, R. W., Mantl, S., Schowalter, L. J., and Tu, K. N. (Mater. Res. Soc. Symp. Proc. 320, Pittsburgh, PA, 1994), p. 15.Google Scholar
5.Osburn, C., in Rapid Thermal Processing, Science and Technology, edited by Fair, R. (Academic Press, Inc., San Diego, CA, 1993), p. 227.CrossRefGoogle Scholar
6.Sun, S. W., Pintchovski, F., Tobin, P. J., and Hance, R. L., in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S. R., Powell, R., and Davies, D. E. (Mater. Res. Soc. Symp. Proc. 92, Pittsburgh, PA, 1987), p. 165.Google Scholar
7.Mattheiss, L. F. and Hensel, J. C., Phys. Rev. B 39, 7754 (1989).CrossRefGoogle Scholar
8.Wang, A. and Lien, J., in VLSI Science and Technology/1985, edited by Bullis, W. M. and Broydo, S. (Electrochem. Soc., Pennington, NJ, 1985), p. 203.Google Scholar
9.Nanda, A. K., Meester, S., and Wilkins, C. W., in Rapid Thermal and Integrated Processing, edited by Wortman, J. J., Gelpey, J. C., Green, M. L., Brueck, S. R. J., and Roozeboom, F. (Mater. Res. Soc. Symp. Proc. 342, Pittsburgh, PA, 1994), p. 111.Google Scholar
10.Jeon, H., Sukow, C. A., Honeycutt, J. W., Humphreys, T. P., Nemanich, R. J., and Rozgonyi, G. A., in Advanced Metallizations in Microelectronics, edited by Katz, A., Murarka, S. P., and Appelbaum, A. (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 569.Google Scholar
11.Mann, R., Racine, C., and Bass, R., in Rapid Thermal and Integrated Processing, edited by Gelpey, J. C., Green, M. L., Wortman, J. J., and Singh, R. (Mater. Res. Soc. Symp. Proc. 224, Pittsburgh, PA, 1991), p. 115.Google Scholar
12.Winnerl, J., Semiconductor Int., 81 (August 1994).Google Scholar
13.Saenger, K. L., Cabral, C. Jr., Clevenger, L. A., Roy, R. A., and Wind, S., J. Appl. Phys. 78, 7040 (1995).CrossRefGoogle Scholar
14.Srikrishna, K., Jairath, R., and Huglin, G., in Rapid Thermal and Integrated Processing, edited by Gelpey, J. C., Green, M. L., Wortman, J. J., and Singh, R. (Mater. Res. Soc. Symp. Proc. 224, Pittsburgh, PA, 1991).Google Scholar
15.Dilhac, J-M., Ganibal, C., Nolhier, N., Moynagh, P. B., Chew, C. P., and Rosser, P. J., Appl. Surf. Sci. 63, 131 (1993).CrossRefGoogle Scholar
16.Georgiou, G. E., Abiko, H., Baiocchi, F. A., Ha, N. T., and Nakahara, S., J. Electrochem. Soc. 141, 1351 (1994).Google Scholar
17.Wang, Q. F., Tsai, J. Y., Osburn, C. M., Chapman, R., and McQuire, G. E., Appl. Phys. Lett. 61, 2920 (1992).CrossRefGoogle Scholar
18.Wong, C. Y., Wang, L. K., McFarland, P. A., and Ting, C. Y., J. Appl. Phys. 60, 243 (1996).Google Scholar
19.Jeon, H., Sukow, C., Honeycutt, J. W., Rozgonyi, G., and Nemanich, R., J. Appl. Phys. 71, 4269 (1992).CrossRefGoogle Scholar
20.Revesz, P., Zheng, L. R., Hung, L. S., and Mayer, J. W., Appl. Phys. Lett. 48, 1591 (1986).CrossRefGoogle Scholar
21.Sukow, C. A. and Nemanich, R. J., J. Mater. Res. 9, 1214 (1994).CrossRefGoogle Scholar
22.Amorsolo, A. V. Jr., Funkenbusch, P. D., and Kadin, A. M., J. Mater. Res. 11, 412 (1996).CrossRefGoogle Scholar
23.Nicolet, M. and Lau, S., in VLSI Handbook, edited by Einspruch, N. G. (Academic Press, Inc., Orlando, FL, 1985), p. 415.CrossRefGoogle Scholar
24.d'Heurle, F. M., Int. Mater. Rev. 34, 53 (1989).CrossRefGoogle Scholar
25.Hren, P. D., Al-Shareef, H., Rou, S. H., Kingon, A. I., Buaud, P., and Irene, E. A., in Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by Katz, A., Murarka, S. P., Nissim, Y. I., and E, J. M.. Harper (Mater. Res. Soc. Symp. Proc. 260, Pittsburgh, PA, 1992), p. 575.Google Scholar
26.Genin, F. Y., Acta Metall. Mater. 43, 4289 (1995).CrossRefGoogle Scholar
27. Kidd Electronics RTA Manual, Kidd Electronics, La Jolla, CA, 1995.Google Scholar
28. Digital Instruments Nanoscope III Scanning Probe Microscopy Control System User's Manual, Ver. 2.5, 1992, Digital Instruments, Inc., Santa Barbara, CA.Google Scholar
29. Digital Instruments Nanoscope III Atomic Force Microscope Instruction Manual Version 2.1, 1992, Digital Instruments, Inc., Santa Barbara, CA.Google Scholar
30.Amorsolo, A. V. Jr., “TiSi2Formation by Rapid Thermal Processing: Effects of Processing on Material Properties,” Ph.D. Thesis in Materials Science, University of Rochester, 1996.Google Scholar
31.Srolovitz, D. J. and Safran, S. A., J. Appl. Phys. 60, 247 (1986).CrossRefGoogle Scholar
32.Genin, F. Y., Mullins, W. W., and Wynblatt, P., Acta Metall. 40, 3239 (1992).CrossRefGoogle Scholar
33.Srolovitz, D. J. and Safran, S. A., J. Appl. Phys. 60, 255 (1986).CrossRefGoogle Scholar
34.Chen, L. J., Lur, W., Chen, J. F., Lee, T. L., and Liang, J. M., in Rapid Thermal and Integrated Processing III, edited by Wortman, J. J., Gelpey, J. C., Green, M. L., Brueck, S. R. J., and Roozeboom, F. (Mater. Res. Soc. Symp. Proc. 342, Pittsburgh, PA, 1994), p. 99.Google Scholar
35.Reiss, G. and Brück, H., Surf. Sci. 269/270, 772 (1992).CrossRefGoogle Scholar
36.Encyclopedia of Materials Science and Engineering, edited by Bever, M. B. (Pergamon Press Ltd., London, 1986), Vol. 6, p. 4806.Google Scholar
37.Whitehouse, D. J., Handbook of Surface Metrology (Institute of Physics, Bristol, UK, 1994).Google Scholar
38.Song, J. F. and Vorburger, T. V., in ASM Handbook, edited by Henry, S. D. (ASM INTERNATIONAL, Metals Park, OH, 1992), Vol. 18, p. 334.Google Scholar
39.Nolan, T. P., Sinclair, R., and Beyers, R., J. Appl. Phys. 71, 720 (1992).CrossRefGoogle Scholar
40.Nulman, J., in Advanced Metallizations in Microelectronics, edited by Katz, A., Murarka, S. P., and Appelbaum, A. (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 123.Google Scholar
41.Kane, W. M., Spratt, J. P., and Hershinger, L. W., J. Appl. Phys. 37, 2085 (1966).CrossRefGoogle Scholar
42.Mullins, W. W., J. Appl. Phys. 28, 333 (1957).CrossRefGoogle Scholar
43.Kennefick, C. M. and Raj, R., Acta Metall. 37, 2947 (1989).CrossRefGoogle Scholar
44.Genin, F. Y., Mullins, W. W., and Wynblatt, P., Acta Metall. 41, 3541 (1993).CrossRefGoogle Scholar
45.Hackney, S. A., Scripta Metall. 22, 1273 (1988).CrossRefGoogle Scholar
46.Hackney, S. A. and Ojard, G. C., Scripta Metall. 22, 1731 (1988).CrossRefGoogle Scholar
47.Mullins, W. W., Acta Metall. 6, 414 (1958).CrossRefGoogle Scholar
48.Ratke, L. and Vogel, H. J., Acta Metall. Mater. 39, 915 (1991).CrossRefGoogle Scholar