Hostname: page-component-7857688df4-92hv7 Total loading time: 0 Render date: 2025-11-17T21:44:54.807Z Has data issue: false hasContentIssue false
  • English
  • Français

The annealing behavior of sputter-deposited Al–Mn and Al–Mn–Si films

Published online by Cambridge University Press:  31 January 2011

M. J. Kaufman ,
F. S. Biancaniello  and
K. G. Kreider
M. J. Kaufman
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98105
F. S. Biancaniello
Affiliation:
Institute for Materials Science and Engineering, National Bureau of Standards, U.S. Department of Commerce, Gaithersburg, Maryland 20899
K. G. Kreider
Affiliation:
Center for Chemical Engineering, National Bureau of Standards, U.S. Department of Commerce, Gaithersburg, Maryland 20899
Get access

Abstract

The annealing behavior of amorphous and icosahedral Al–17Mn and Al–20Mn–4Si films, prepared by sputter deposition, have been studied. Both hot stage transmission electron microscopy of thin (20–200 nm) films and furnace annealing plus x-ray diffration of thicker (1–10μm) films were utilized to study the various transformations resulting from elevated temperature exposures. The results are presented and correlated with the reactions anticipated from the phase diagrams and the results reported in previous studies.

Information

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1342 - 1348
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Shechtman, D., Blech, I., Gratias, D., and Cahn, J. W., Phys. Rev. Lett. 53, 1951 (1984).CrossRefGoogle Scholar
2Kreider, K. G., Biancaniello, F. S., and Kaufman, M. J., Scr. Metall. 21, 657 (1987).CrossRefGoogle Scholar
3Knapp, J. A. and Follstaedt, D. M., Phys. Rev. Lett. 55, 1591 (1985).CrossRefGoogle Scholar
4Lilienfeld, D. A., Natasi, M., Johnson, H. H., Ast, D. G., and Mayer, J. W., Phys. Rev. Lett. 55, 1587 (1985).CrossRefGoogle Scholar
5Murray, J. L., McAlister, A. J., Schaeffer, R. J., Bendersky, L. A., Biancanello, F. S., and Moffat, D. L., Metall. Trans. A 18, 385 (1987).CrossRefGoogle Scholar
6Cooper, M. and Robinson, K., Acta Crystallogr. 20, 614 (1966).CrossRefGoogle Scholar
7Yoshida, K. and Takekawa, A., Thin Solid Films 48, 293 (1978).CrossRefGoogle Scholar
8Kaufman, M. J. and Fraser, H. L., Int. J. Rapid Solid. 1, 27 (1984-1985).Google Scholar
9Buxton, B. F., Eades, J. A., Steeds, J. W., and Rackham, G. M., Philos. Trans. R. Soc, London A 281, 171 (1976).Google Scholar
10Steeds, J. W., Introduction to Analytical Electron Microscopy, edited by Hren, J. J., Goldstein, J. I., and Joy, D. C. (Plenum, New York, 1979), p. 387.CrossRefGoogle Scholar
11Taylor, M. A., Acta Crystallogr. 12, 393 (1959).CrossRefGoogle Scholar
12Robinson, K., Acta Crystallogr. 5, 397 (1952).CrossRefGoogle Scholar
13Bendersky, L. and Kaufman, M. J. (unpublished research).Google Scholar
14Guyot, P. and Audier, M., Philos. Mag. B 52, L15 (1985).CrossRefGoogle Scholar
15Elser, V. and Henley, C. L., Phys. Rev. Lett. 55, 2883 (1985).CrossRefGoogle Scholar