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Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Zhenqiang Ma  and
Gary S. Was
Zhenqiang Ma
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, Michigan, 48109
Gary S. Was
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, Michigan, 48109
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Abstract

Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.

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Articles
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Journal of Materials Research , Volume 14 , Issue 10 , October 1999 , pp. 4051 - 4061
Copyright
Copyright © Materials Research Society 1999

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