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Uncoupling crystal growth and nucleation in the deposition of diamond from the gas phase

Published online by Cambridge University Press:  31 January 2011

E. Molinari ,
R. Polini ,
M.L. Terranova ,
P. Ascarelli  and
S. Fontana
E. Molinari
Affiliation:
Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma “Tor Vergata”, I-00173 Roma, Italy
R. Polini
Affiliation:
Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma “Tor Vergata”, I-00173 Roma, Italy
M.L. Terranova
Affiliation:
Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma “Tor Vergata”, I-00173 Roma, Italy
P. Ascarelli
Affiliation:
Istituto di Metodologie Avanzate Inorganiche, Area della Ricerca del CNR, C.P.10, I-00016 Monterotondo Scalo, Italy
S. Fontana
Affiliation:
Istituto di Metodologie Avanzate Inorganiche, Area della Ricerca del CNR, C.P.10, I-00016 Monterotondo Scalo, Italy
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Abstract

Diamond deposits of well-separated particles have been obtained by the hot filament CVD technique on Si(100) wafers. Particle counting in SEM images and determination of their linear dimensions require a separate study of growth rates and of nucleation densities as a function of time, substrate temperature (500 °C–950 °C), gas phase composition (0.5–2% CH4 in H2), and total pressure (15–76 Torr). It is shown that recent models proposed for the growth process can successfully be applied if proper consideration is given to the high catalytic activity of the growing diamond surface for the heterogeneous recombination of gaseous H-atoms. This fast reaction controls the H-atom concentration at the surface and couples growth rates and nucleation densities via the gas phase.

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Articles
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Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1778 - 1787
Copyright
Copyright © Materials Research Society 1992

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