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Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures

Published online by Cambridge University Press:  31 January 2011

Jeffrey S. Dyck ,
Kathleen Kash ,
Cliff C. Hayman ,
Alberto Argoitia ,
Michael T. Grossner ,
John C. Angus  and
Wei-Lie Zhou
Jeffrey S. Dyck
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106–7079
Kathleen Kash*
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106–7079
Cliff C. Hayman
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7217
Alberto Argoitia
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7217
Michael T. Grossner
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7217
John C. Angus
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7217
Wei-Lie Zhou
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204
*
a)Address all correspondence to this author.
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Abstract

Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium with nitrogen from microwave plasma sources. The structure was confirmed by x-ray diffraction, electron diffraction, and elemental analysis. Two types of growth were observed: (i) dendritic crystals on the original melt surface, and (ii) hexagonal platelets adjacent to the In metal source on the upper edge of the crucible. The method does not involve a foreign substrate to initiate growth and is a potential alternative to the high-pressure techniques normally associated with bulk growth of indium nitride. The lattice parameters were a = 3.5366 ± 0.0005 Å and c = 5.7009 ± 0.0005 Å, with c/a = 1.612 ± 0.0005.

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Articles
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Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2411 - 2417
Copyright
Copyright © Materials Research Society 1999

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