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Synthesis and Dielectric Properties of Layer-structured Compounds An−3Bi4TinO3n+3 (A = Ba, Sr, Ca) with n > 4

Published online by Cambridge University Press:  03 March 2011

R.Z. Hou  and
X.M. Chen
R.Z. Hou
Affiliation:
Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
X.M. Chen*
Affiliation:
Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: xmchen@cmsce.zju.edu.cn
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Abstract

Several bismuth layer-structured compounds An−3Bi4TinO3n+3 (A = Ba, Sr, Ca) with n > 4 were synthesized and investigated. The average radius of A-site cations was found to be closely related to the lattice parameters in the a–b plane and, therefore, closely related to the stability of the layer structure. For Ba2Bi4Ti5O18 ceramics, there was a diffused phase transition centered at approximately 330 °C, which should be due to the cation redistribution of A-site Ba2+ and Bi3+ in the (Bi2O2)2+ layer. For Sr2Bi4Ti5O18 ceramics, a sharp dielectric constant peak was found at 325 °C. Ceramics of five-layered Ca2Bi4Ti5O18 and six-layered Ca3Bi4Ti6O21 showed temperature-stable dielectric constants up to 800 °C, and ferroelectricity was observed. In addition, as ferroelectrics, these Ca-containing bismuth layer-structured compounds showed frequency-independent dielectric constants >150 and small tan δ on the order of 10−3–10−4 in the frequency range of 1 kHz to 1 MHz.

Keywords

CeramicDielectric propertiesFerroelectric

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Articles
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Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2354 - 2359
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1Aurivillius, B.: Mixed bismuth oxides with layer lattices I. The structure type of CaNb2Bi2O9. Ark. Kemi 1, 463 (1949).Google Scholar
2Aurivillius, B.: Mixed bismuth oxides with layer lattices II. Structure of Bi4Ti3O12. Ark. Kemi 1, 499 (1949).Google Scholar
3Aurivillius, B.: Mixed oxides with layer lattices III. Structure of BaBi4Ti4O15. Ark. Kemi 2, 519 (1950).Google Scholar
4Araujo, C.A., Cuchlaro, J.D., McMillan, L.D., Scott, M.C. and Scott, J.F.: Fatigue-free ferroelectric capacitors with platinum electrodes. Nature 374, 627 (1995).CrossRefGoogle Scholar
5Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J. and Jo, W.: Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 401, 682 (1999).CrossRefGoogle Scholar
6Tuner, R.C., Fuierer, P.A., Newnham, R.E. and Shrout, T.R.: Materials for high temperature acoustic and vibration sensors: A review. Appl. Acoust. 41, 299 (1994).CrossRefGoogle Scholar
7Damjanovic, D.: Materials for high temperature piezoelectric transducers. Curr. Opin. Solid State Mater. Sci. 3, 469 (1998).CrossRefGoogle Scholar
8Irie, H., Miyayama, M. and Kudo, T.: Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals. J. Appl. Phys. 90, 4089 (2001).CrossRefGoogle Scholar
9Kikuchi, T.: Stability of layered bismuth compounds in relation to the structural mismatch. Mater. Res. Bull. 14, 1561 (1979).CrossRefGoogle Scholar
10Aurivillius, B. and Fang, P.H.: Ferroelectricity in the compound Ba2Bi4Ti5O18. Phys. Rev. 126, 893 (1962).CrossRefGoogle Scholar
11Irie, H., Miyayama, M. and Kudo, T.: Electrical properties of a bismuth layer-structured Ba2Bi4Ti5O18 single crystal. J. Am. Ceram. Soc. 83, 2699 (2000).CrossRefGoogle Scholar
12Fernández, J.F., Caballero, A.C., Villegas, M., de Frutos, J. and Lascano, L.: Relaxor behavior of PbxBi4Ti3+xO12+3x (x = 2, 3) Aurivillius ceramics. Appl. Phys. Lett. 81, 4811 (2002).CrossRefGoogle Scholar
13Zhang, S.T., Chen, Y.F., Sun, H.P., Pan, X.Q., Liu, Z.G. and Ming, N.B.: Epitaxial growth and dielectric properties of homologous Srm −3Bi4TimO3m +3 (m = 3, 4, 5, 6) thin films. Appl. Phys. Lett. 81, 5009 (2002).CrossRefGoogle Scholar
14Armstrong, R.A. and Newnham, R.E.: Bismuth titanate solid solutions. Mater. Res. Bull. 7, 1025 (1972).CrossRefGoogle Scholar
15Shannon, R.D.: Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallogr. A32, 751 (1976).CrossRefGoogle Scholar
16Kholkin, A.L., Avdeev, M., Costa, M.E.V., Baptista, J.L. and Dorogovtsev, S.N.: Dielectric relaxation in Ba-based layered perovskites. Appl. Phys. Lett. 79, 662 (2001).CrossRefGoogle Scholar
17Shimakawa, Y., Kubo, Y., Nakagawa, Y., Goto, S., Kamiyama, T., Asano, H. and Izumi, F.: Crystal structure and ferroelectric properties of ABi2Ta2O9 (A = Ca, Sr, and Ba). Phys. Rev. B 61, 6559 (2000).CrossRefGoogle Scholar
18Macquart, R., Kennedy, B.J., Vogt, T. and Howard, C.J.: Phase transition in BaBi2Nb2O9: Implications for layered ferroelectrics. Phys. Rev. B 66, 212102 (2002).CrossRefGoogle Scholar
19Blake, S.M., Falconer, M.J., McCreedy, M. and Lightfoot, P.: Cation disorder in ferroelectric Aurivillius phases of the type Bi2ANb2O9 (A = Ba, Sr, Ca). J. Mater. Chem. 7, 1609 (1997).CrossRefGoogle Scholar
20Hou, R.Z. and Chen, X.M.: Neodymium-substituted CaBi4Ti4O15 bismuth layered compounds. J. Eur. Ceram. Soc. (in press).Google Scholar
21Maalal, R., Manier, M. and Mercurio, J.P.: Dielectric properties of the mixed Aurivillius phases MIIBi8Ti7O27 (MII = Ca, Sr, Ba, and Pb). J. Eur. Ceram. Soc. 15, 1135 (1995).CrossRefGoogle Scholar