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Stored elastic energy influence on the elastic–plastic transition of GaAs structures

Published online by Cambridge University Press:  23 September 2011

Eric Le Bourhis ,
Ludovic Largeau  and
Gilles Patriarche
Eric Le Bourhis*
Affiliation:
Institut P′, UPR 3346 CNRS—Université de Poitiers—ENSMA, SP2MI, BP 30179-F86962 Futuroscope Chasseneuil Cedex, France
Ludovic Largeau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, 91460 Marcoussis, France
Gilles Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, 91460 Marcoussis, France
*
a)Address all correspondence to this author. e-mail: eric.le.bourhis@univ-poitiers.fr
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Abstract

The (001) GaAs surfaces have been modified by thin elastically stressed InGaAs-buried layers and tested under Berkovich contact. The elastic–plastic transition determined from the pop-in event observed in the force control mode of the indentation machine appears at slightly lower loads (0.44–0.46 mN) when compared to bare GaAs surface (0.50 mN). Estimations indicate that for both studied sublayers, the stored elastic energy is about 20% of the elastic indentation energy reached at elastic–plastic transition when the sublayer is observed not to relax plastically.

Keywords

NanoindentationNanostructureTransmission electron microscopy

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Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 1: Focus Issue: Instrumented Indentation , 14 January 2012 , pp. 177 - 181
Copyright
Copyright © Materials Research Society 2011

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References

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