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Solid state reactions between Ni3Al and SiC

Published online by Cambridge University Press:  31 January 2011

T. C. Chou  and
T. G. Nieh
T. C. Chou
Affiliation:
Lockheed Missiles and Space Company, Inc., Research and Development Division, O-9310, B-204, 3251 Hanover Street, Palo Alto, California 94304
T. G. Nieh
Affiliation:
Lockheed Missiles and Space Company, Inc., Research and Development Division, O-9310, B-204, 3251 Hanover Street, Palo Alto, California 94304
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Abstract

Solid state reactions between SiC and Ni3Al were studied at 1000°C for different times. Multi-reaction-layers were generated in the interdiffusion zone. Cross-sectional views of the reaction zones show the presence of three distinguishable layers. The Ni3Al terminal component is followed by NiAl, Ni5.4Al1Si2, Ni(5.4−x)Al1Si2 + C layers, and the SiC terminal component. The Ni5.4Al1Si2 layer shows carbon precipitation free, while modulated carbon bands were formed in the Ni(5.4−x)Al1Si2 + C layer. The NiAl layer shows dramatic contrast difference with respect to the Ni3Al and Ni5.4Al1Si2 layers, and is bounded by the Ni3Al/NiAl and Ni5.4Al1Si2/NiAl phase boundaries. The kinetics of the NiAl formation is limited by diffusion, and the growth rate constant is measured to be 2 ⊠ 10−10 cm2/s. The thickness of the reaction zone on the SiC side is always thinner than that on the Ni3Al side and no parabolic growth rate is obeyed, suggesting that the decomposition of the SiC may be a rate limiting step for the SiC/Ni3Al reactions. The carbon precipitates were found to exist in either a disordered or partially ordered (graphitic) state, depending upon their locations from the SiC interface. The formation of NiAl phase is discussed based on an Al-rejection model, as a result of a prior formation of Ni–Al–Si ternary phase. A thermodynamic driving force for the SiC/Ni3Al reactions is suggested.

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Articles
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Journal of Materials Research , Volume 5 , Issue 9 , September 1990 , pp. 1985 - 1994
Copyright
Copyright © Materials Research Society 1990

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