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Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

Published online by Cambridge University Press:  31 January 2011

Seung-Hyun Kim ,
Dong-Joo Kim ,
S. K. Streiffer  and
A. I. Kingon
Seung-Hyun Kim
Affiliation:
Dapartment of Materials Science and Engineering, North Carolina University, Raleigh, North Carolina 27695
Dong-Joo Kim
Affiliation:
Dapartment of Materials Science and Engineering, North Carolina University, Raleigh, North Carolina 27695
S. K. Streiffer
Affiliation:
Dapartment of Materials Science and Engineering, North Carolina University, Raleigh, North Carolina 27695
A. I. Kingon
Affiliation:
Dapartment of Materials Science and Engineering, North Carolina University, Raleigh, North Carolina 27695
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Abstract

Mixed composition layered lead zirconate titanate (PZT) films sZr/Ti ratio = 30/70 + 65/35d with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (ΔV) were 0.51 V after heating at 150 °C for 4410 s, two times lower than for films without a stoichiometric thin layer.

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Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2476 - 2483
Copyright
Copyright © Materials Research Society 1999

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