Hostname: page-component-7dd5485656-c8zdz Total loading time: 0 Render date: 2025-10-29T23:50:01.820Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and characterization of c-axis oriented LiNbO3 film on a transparent conducting Al:ZnO inter-layer on Si

Published online by Cambridge University Press:  03 March 2011

Vinay Gupta ,
P. Bhattacharya ,
Yu. I. Yuzyuk ,
R.S. Katiyar ,
Monika Tomar  and
K. Sreenivas
Vinay Gupta
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
Yu. I. Yuzyuk
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
R.S. Katiyar*
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
Monika Tomar
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
K. Sreenivas
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
*
a) Address all correspondence to this author. e-mail: rkatiyar@rrpac.upr.clu.edu
Get access

Abstract

C-axis oriented lithium niobate (LiNbO3) films were deposited by pulsed-laser deposition on silicon using a transparent conducting interlayer of aluminum (Al)-doped zinc oxide (ZnO). Only two x-ray diffraction reflections corresponding to (006) and (0012) planes of LiNbO3 were observed in the films deposited at a 100-mTorr oxygen pressure and a 450–500 °C substrate temperature. Presence of sharp modes corresponding to E(TO) and A(LO), and absence of any superfluous peaks mainly around 900–905 cm−1 in the Raman spectra confirmed the formation of textured LiNbO3 film. Measured value of direct current and alternate current (AC) conductivities and dielectric constant are 8.6 × 10-12 Ω−1cm-1, 1.16 × 10-6 Ω−1cm-1, and 29.3, respectively, at room temperature. Behavior of dielectric constant and AC conductivity with frequency and temperature are close to the reported single-crystal data.

Keywords

Pulsed laser deposition (PLD)Dielectric propertiesRaman spectroscopy

Information

Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2235 - 2239
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Wooten, L., Kissa, K.M., Yi-Yan, A., Murphy, E.J., Lafaw, D.A., Hallemeier, P.F., Maack, D., Attanasio, D.V., Fritz, D.J., McBrien, G.J. and Bossi, D.E.: A review of Lithium niobate modulators for fibre-optic communication systems. IEEE J. Sel. Top. Quantum Electron. 6, 69 (2000).CrossRefGoogle Scholar
2.Sethen, M. and Ghosez, Ph.: First-principles study of the dielectric and dynamical properties of lithium niobate. Phys. Rev. B 65, 214 2002.Google Scholar
3.de Bernabe, A., Prieto, C. and de Andres, A.: Effect of stoichiometry on the dynamic mechanical properties of LiNbO3. J. Appl. Phy. 79, 143 (1996).Google Scholar
4.Tan, S., Gilbert, T., Hung, C-Y. and Schlesinger, T.E.: The role of Si3N4 layers in determining the texture of sputter deposited LiNbO3 thin films. J. Appl. Phys. 79, 3548 (1996).CrossRefGoogle Scholar
5.Kong, Y., Xu, J., Chen, X., Zhang, C., Zhang, W. and Zhang, G.: Ilmenite like stacking defect in non-stoichiometric lithium niobate crystals investigated by Raman scattering spectra. J. Appl. Phys. 87, 4410 (2000).Google Scholar
6.Shibata, Y., Kaya, K., Akashi, K., Kanai, M., Kawai, T. and Kawai, S.: Epitaxial growth and surface acoustic wave properties of lithium niobate films grown by pulsed laser deposition. J. Appl. Phys. 77, 1498 (1995).CrossRefGoogle Scholar
7.Matsunaga, H., Ohno, H., Okamoto, Y. and Nakajima, Y.Hetero-epitaxial growth of LiNbO3 single crystal films by ion plating method. J. Cryst. Growth 99, 630 (1990).Google Scholar
8.Tan, S., Schlesinger, T.E. and Migliuolo, M.: Sputter deposited c-oriented LiNbO3 thin films on SiO2. Appl. Phys. Lett. 68, 2651 (1996).Google Scholar
9.Hu, W.S., Liu, Z.G., Wu, Z.C., Liu, J.M., Chen, X.Y. and Feng, D.: Pulsed laser deposition of (001) textured LiNbO3 films on Al2O3/SiO2/Si substrate. Appl. Surf. Sci. 141, 197 (1999).Google Scholar
10.Shimizu, M., Furushima, Y., Nishida, T. and Shiosaki, T.: Preparation and optical waveguide properties of LiNbO3 thin films by rf magnetron sputtering. Jpn. J. Appl. Phys., Part 1 32, 4111 (1993).CrossRefGoogle Scholar
11.Mansingh, A. and Dhar, A.The ac conductivity and dielectric constant of lithium niobate single crystals. J. Phys. D 18, 2059 (1985).Google Scholar
12.Nassau, K., Levinstein, H.J. and Loiacono, G.M.Ferroelectric lithium niobate 2. preparation of single domain crystals. J. Phys. Chem. Solids 27, 989 (1966).Google Scholar