Hostname: page-component-7dd5485656-glrdx Total loading time: 0 Render date: 2025-10-31T06:50:49.659Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Published online by Cambridge University Press:  03 March 2011

R.J. Schreutelkamp ,
W. Coppye ,
W. De Bosscher ,
R. van Meirhaeghe ,
L. van Meirhaeghe ,
J. Vanhellemont ,
B. Deweerdt ,
A. Lauwers  and
K. Maex
R.J. Schreutelkamp
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
W. Coppye
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
W. De Bosscher
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
R. van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, B-9000 Gent, Belgium
L. van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, B-9000 Gent, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
Get access

Abstract

The formation of ultrathin (≤20 nm) and smooth CoSi2 layers on c–Si substrates has been studied by using a one- and a two-step RTP silicidation method. Pinhole-free silicide layers with a thickness down to ∼10–12 nm were formed on n−, n+, and p+ crystalline Si substrates in the one-step RTP process by sputtering of Co films as thin as 4 nm and subsequent silicidation at 750 °C for 5 or 30 s. The two-step RTP silicidation method is based on the consumption of only a small fraction of a thick sputtered Co film to form Co2Si or CoSi during a first RTP step at 400–500 °C. A selective etch follows to remove the unreacted Co film. During a second, higher temperature, RTP step CoSi2 is formed. Pinhole-free and smooth CoSi2 films with a thickness down to 20 nm were formed in this way on both n+ and p+ monocrystalline Si substrates.

Information

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 12 , December 1993 , pp. 3111 - 3121
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Davari, B., Chang, W-H., Petrillo, K. E., Wong, C. Y., Moy, D., Taur, Y., Wordeman, M. R., Sun, J. Y-C., Hsu, C. C-H., and Polcari, M. R., IEEE Trans. Elec. Dev. 39, 967 (1992).CrossRefGoogle Scholar
2Liu, R., Williams, D. S., and Lynch, W. T., J. Appl. Phys. 63, 1990 (1988).CrossRefGoogle Scholar
3Taur, Y., Davari, B., Moy, D., Sun, J. Y-C., and Ting, C. Y., IBM J. Res. Develop. 31, 627 (1987).CrossRefGoogle Scholar
4Juang, M. H. and Cheng, H. C., J. Appl. Phys. 71, 1271 (1992).CrossRefGoogle Scholar
5Jiang, H., Osburn, CM., Xiao, Z-G., McGuire, G. E., and Rozgonyi, G. A., J. Electrochem. Soc. 139, 211 (1992), and references therein.CrossRefGoogle Scholar
6Elst, K., Vandervorst, W., Clarysse, T., Eichhammer, W., and Maex, K., J. Vac. Sci. Technol. B 10 (1), 524 (1992).CrossRefGoogle Scholar
7Lawrence, M., Dass, A., Fraser, D. B., and Wei, C-S., Appl. Phys. Lett. 58, 1308 (1991).Google Scholar
8Hsia, S. L., Tan, T. Y., Smith, P., and McGuire, G. E., J. Appl. Phys. 72, 1864 (1992) and J. Appl. Phys. 70, 7579 (1991).CrossRefGoogle Scholar
9Xiao, Z. G., Rozgonyi, G. A., Canovai, C. A., and Osburn, CM., J. Mater. Res. 7, 269 (1992).CrossRefGoogle Scholar
10Schreutelkamp, R. J., Deweerdt, B., Verbeeck, R., and Maex, K., Micro-Electronic Eng. 19, 665 (1992).CrossRefGoogle Scholar
11Sakai, I., Abiko, H., Kawaguchi, H., Hirayama, T., Johansson, L. E. G, and Okabe, K., 1992 Symp. on VLSI Technology, Digest of Technical Papers, 8A–1, p. 66.Google Scholar
12Lur, W. and Chen, L. J., J. Appl. Phys. 64, 3505 (1988).CrossRefGoogle Scholar
13Chen, W., Liu, J., Banerjee, S., and Lee, J., in Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by Katz, A., Murarka, S. P., Nissim, Y. I., and Harper, J. M. E. (Mater. Res. Soc. Symp. Proc. 260, Pittsburgh, PA, 1992), p. 163.Google Scholar
14Gambino, J. P., Colgan, E. G., and Cunningham, B., in Interconnection and Contact Metallization for ULSI, edited by Herndon, T. O. and Wu, A. L. (The Electrochemical Society, 1992), Vol. 92–6, p. 264.Google Scholar
15Osburn, C. M., Wang, Q. F., Kellam, M., Canovai, C., Smith, P. L., McGuire, G. E., Xiao, Z. G., and Rozgonyi, G. A., unpublished research.Google Scholar
16Xiao, Z. G., Rozgonyi, G. A., Canovai, C. A., and Osburn, C. M., in Evolution of Thin Film and Surface Microstructure, edited by Thompson, C V., Tsao, J. Y., and Srolovitz, D. J. (Mater. Res. Soc. Symp. Proc. 202, Pittsburgh, PA, 1991), p. 101.Google Scholar
17Xiao, Z. G., Jiang, H., Honeycutt, J., Rozgonyi, G. A., Osburn, C. M., and McGuire, G., in Advanced Metallizations in Microelectronics, edited by Katz, A., Murarka, S. P., and Appelbaum, A. (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 167.Google Scholar
18Murarka, S. P., J. Vac. Sci. Technol. 17, 775 (1980).CrossRefGoogle Scholar
19Hensel, J. C., Tung, R. T., Poate, J. M., and Unterwald, F. C., Appl. Phys. Lett. 44, 913 (1984).CrossRefGoogle Scholar
20Fedorovich, N. A., Sov. Phys. Solid State 22, 1093 (1980).Google Scholar
21Schreutelkamp, R. J., Maex, K., Coppye, W. A., Vandenabeele, P., and Vermeiren, C., unpublished data.Google Scholar
22Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., and Maex, K., in Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by Katz, A., Murarka, S. P., Nissim, Y. I., and Harper, J. M. E. (Mater. Res. Soc. Symp. Proc. 260, Pittsburgh, PA, 1992), p. 145; Appl. Phys. Lett. 61, 2296 (1992).Google Scholar
23Doolittle, L. R., Nucl. Instrum. Methods B 9, 344 (1985).CrossRefGoogle Scholar
24Tu, K. N. and Mayer, J. W., in Thin Films—Interdiffusion and Reactions, edited by Poate, J. M., Tu, K. N., and Mayer, J. W. (John Wiley and Sons, New York, 1978), Chap. 10, pp. 359–405.Google Scholar
25Audet, S. A., White, A. E., Short, K. T., Hsieh, Y-F., Ross, F. M., and Rafferty, C. S., Appl. Phys. Lett. 61, 2311 (1992).CrossRefGoogle Scholar
26d'Heurle, F. M. and Petersson, C.S., Thin Solid Films 128, 283 (1985).CrossRefGoogle Scholar
27Appelbaum, A., Knoell, R. V., and Murarka, S. P., J. Appl. Phys. 57, 1880 (1985).CrossRefGoogle Scholar
28Lasky, J. B., Nakos, J. S., Cain, O. J., and Geiss, P. J., IEEE Trans. Elec. Dev. 38, 262 (1991).CrossRefGoogle Scholar
29Maex, K. and Schreutelkamp, R. J., in Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited Katz, A., Murarka, S. P., Nissim, Y. I., and Harper, J. M. E. (Mate Res. Soc. Symp. Proc. 260, Pittsburgh, PA, 1992), p. 133.Google Scholar