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Amorphization phenomenon in Ni/amorphous Si multilayers

Published online by Cambridge University Press:  03 March 2011

W.H. Wang  and
W.K. Wang
W.H. Wang
Affiliation:
Institute of Physics, Academia Sinica, Beijing 100080, China
W.K. Wang
Affiliation:
International Center for Materials Physics, Academia Sinica, Shenyang 110015, China and Institute of Physics, Academia Sinica, Beijing 100080, China
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Abstract

Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (XTEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.

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Articles
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Journal of Materials Research , Volume 9 , Issue 2 , February 1994 , pp. 401 - 405
Copyright
Copyright © Materials Research Society 1994

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