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High sensitivity SOA-PIN/TIA photoreceiver for 40 Gb/s applications and beyond

Published online by Cambridge University Press:  10 February 2016

Philippe Angelini ,
Fabrice Blache ,
Christophe Caillaud ,
Michel Goix ,
Filipe Jorge ,
Karim Mekhazni ,
Jean-Yves Dupuy  and
Mohand Achouche
Philippe Angelini*
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Fabrice Blache
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Christophe Caillaud
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Michel Goix
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Filipe Jorge
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Karim Mekhazni
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Jean-Yves Dupuy
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
Mohand Achouche
Affiliation:
III–V Laboratory, A Joint Laboratory of “Alcatel Lucent Bell Labs”, “Thales Research and Technology” and “CEA Leti”, route de Nozay, 91460 Marcoussis, France
*
Corresponding author: P. Angelini Email: philippe.angelini@3-5lab.fr
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Abstract

This paper reports a differential photoreceiver module designed for short reach applications such as access network and data center interconnect. It consists of a monolithically integrated semi-conductor optical amplifier with a PIN photodiode and a linear transimpedance amplifier (TIA) mounted on the same carrier. A matching circuit is placed between the PIN and the TIA in order to increase the cut-off frequency. The module shows a −3 dB bandwidth of 43 GHz, a single-ended conversion gain of 10 000 V/W for an optical input power of −25 dBm and a sensitivity at 40 Gb/s non-return-to-zero operation of −22.5 dBm for a bit error rate of 10−9.

Keywords

Applications and standards (mobile, wireless, networks)Low noise and communication receivers

Information

Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 3: Journee Nationale des Micro-ondes (JNM) 2015 , May 2016 , pp. 437 - 445
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

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