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X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+ And N+

Published online by Cambridge University Press:  06 March 2019

E. H. teKaat  and
G. H. Schwuttke
E. H. teKaat
Affiliation:
International Business Machines Corporation Route 52, Hopewell Junction, New York 12533
G. H. Schwuttke
Affiliation:
International Business Machines Corporation Route 52, Hopewell Junction, New York 12533
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Abstract

Double crystal diffractometer measurements on silicon bombarded to a fluence >1016 ions/cm2 with 1 MeV deuterium and 2 MeV nitrogen are reported. Such measurements provide insight into radiation damage in silicon through the observation of Bragg case pendelloesung fringes and double peak rocking curves. Bragg case pendelloesung fringes are used to determine nondestructively the projected range of ions in silicon. Double peak rocking curves are used to measure changes in lattice parameter with the ion dose. Finally, a model of radiation damage in silicon is presented.

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Type
Research Article
Information
Advances in X-Ray Analysis , Volume 15: Twentieth Annual Conference on Applications of X-ray Analysis, August 11-13, 1971 , 1971 , pp. 504 - 515
Copyright
Copyright © International Centre for Diffraction Data 1971

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