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    • Publisher:
      Cambridge University Press
      Publication date:
      September 2009
      February 2001
      ISBN:
      9780511524615
      9780521451864
      9780521017893
      Dimensions:
      (247 x 174 mm)
      Weight & Pages:
      1.097kg, 422 Pages
      Dimensions:
      (247 x 174 mm)
      Weight & Pages:
      1.068kg, 424 Pages
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    Book description

    Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors deals with complex nonlinear dynamics, pattern formation, and chaotic behaviour in such systems. In doing so it bridges the gap between two well-established fields: the theory of dynamic systems, and nonlinear charge transport in semiconductors. This unified approach is used to consider important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, like current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

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