Crossref Citations
This Book has been
cited by the following publications. This list is generated based on data provided by Crossref.
Xu, X.
Isomura, M.
Yoon, J. H.
Wagner, S.
and
Abelson, J. R.
1991.
Correlation Between Freeze-In Temperature of Defect Density and Hydrogen Concentration in a-Si:H.
MRS Proceedings,
Vol. 219,
Issue. ,
Liu, J. Z.
1992.
The role of the quasi-Fermi energy in steady-state recombination in hydrogenated amorphous silicon.
Philosophical Magazine Letters,
Vol. 66,
Issue. 2,
p.
85.
Robertson, J.
1992.
π-bonded clusters in amorphous carbon materials.
Philosophical Magazine B,
Vol. 66,
Issue. 2,
p.
199.
Liu, J. Z.
1992.
Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H.
MRS Proceedings,
Vol. 258,
Issue. ,
Osborne, I.S.
Hajto, J.
Rose, M.J.
Snell, A.J.
Leœmber, P.G.
and
Owen, A.E.
1992.
The Role of the a-Si:H Layer in Metal / a-Si:H / Metal Memory Structures.
MRS Proceedings,
Vol. 258,
Issue. ,
Chabloz, P.
Keppner, H.
Baertschi, V.
Shah, A.
Chatellard, D.
Egger, J.-P.
Denoréaz, M.
Jeannet, E.
Germond, J.-F.
and
Vuilleumier, R.
1992.
X-Ray Detectors Based on “Thick” a-Si:H Layers Deposited by the VHF-GD Process.
MRS Proceedings,
Vol. 258,
Issue. ,
Boyce, J. B.
Johnson, N. M.
Ready, S. E.
and
Walker, J.
1992.
Local bonding structure of deuterium in single-crystal silicon determined by nuclear magnetic resonance.
Physical Review B,
Vol. 46,
Issue. 7,
p.
4308.
Boland, John J.
and
Parsons, Gregory N.
1992.
Bond Selectivity in Silicon Film Growth.
Science,
Vol. 256,
Issue. 5061,
p.
1304.
Street, R.A.
1992.
Amorphous Silicon Electronics.
MRS Bulletin,
Vol. 17,
Issue. 11,
p.
70.
Nebel, C. E.
Street, R. A.
Johnson, N. M.
and
Tsai, C. C.
1992.
High-electric-field transport ina-Si:H. II. Dark conductivity.
Physical Review B,
Vol. 46,
Issue. 11,
p.
6803.
Caputo, D.
De Cesare, G.
Irrera, F.
Palma, F.
Salvatori, S.
and
Vincenzoni, R.
1992.
Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements.
MRS Proceedings,
Vol. 258,
Issue. ,
Nebel, C. E.
Street, R. A.
Johnson, N. M.
and
Kocka, J.
1992.
High-electric-field transport ina-Si:H. I. Transient photoconductivity.
Physical Review B,
Vol. 46,
Issue. 11,
p.
6789.
Xiao, Y.
Heben, M. J.
Pankove, J. I.
and
Tsuo, Y. S.
1992.
Properties of Porous Silicon with Photoluminescence Enhanced by a Remote-Plasma Treatment.
MRS Proceedings,
Vol. 283,
Issue. ,
Nakagawa, O. S.
Ashok, S.
Zhang, K.
Miller, D. L.
and
Chung, W. K.
1992.
Plasma Hydrogenation Studies on Low-Temperature Mbe-Grown GaAs.
MRS Proceedings,
Vol. 262,
Issue. ,
Yuzo Shinozuka, Yuzo Shinozuka
1993.
Electron-Lattice Interaction in Nonmetallic Materials: Configuration Coordinate Diagram and Lattice Relaxation
.
Japanese Journal of Applied Physics,
Vol. 32,
Issue. 10R,
p.
4560.
Brogueira, P.
Grebner, S.
Wang, F.
schwarz, R.
Chu, V.
and
Conde, J.P.
1993.
Low Filament Temperature Deposition of a-Si:H by Catalytic Chemical Vapor Deposition.
MRS Proceedings,
Vol. 297,
Issue. ,
Park, Young K.
and
Myles, Charles W.
1993.
Semiempirical total-energy functional for silicon-hydrogen interactions in solids.
Physical Review B,
Vol. 48,
Issue. 23,
p.
17086.
Zhou, J.-H.
and
Elliott, S. R.
1993.
Tunneling recombination and the photoconductivity of amorphous silicon in the temperature region around 100 K.
Physical Review B,
Vol. 48,
Issue. 3,
p.
1505.
Lee, C. H.
Yu, G.
and
Heeger, A. J.
1993.
Persistent photoconductivity in poly(p-phenylenevinylene): Spectral response and slow relaxation.
Physical Review B,
Vol. 47,
Issue. 23,
p.
15543.
Sridhar, Nagarajan
Chung, D. D. L.
Anderson, W. A.
Yu, W. Y.
Fu, L. P.
and
Petrou, A.
1993.
Kinetics Of Hydrogen Evolution And Crystallization In Hydrogenated Amorphous Silicon Films Studied By Thermal Analysis And Raman Scattering.
MRS Proceedings,
Vol. 321,
Issue. ,