In the three-phase (pure donor, pure acceptor, and mixed phases) morphologies of organic solar cells, the mixed phases produce an energy cascade that promotes the generation of free carriers. However, how to optimize the content of the mixed phases is a challenging problem. The authors proposed to control different content of mixed phases in DRTB-T and IDIC blends by additive and solvent vapor annealing (SVA). The authors first formed the largest extent amount of mixed phases by the additive cinene (2%) to inhibit the crystallization of DRTB-T and IDIC. And then, different amounts of mixed phases were achieved by further SVA for different times (from 0 to 50 s) to increase the content of pure DRTB-T and IDIC phases. The energetic offsets (ΔE) of pure and mixed phases gradually decrease from 0.529 to 0.477 eV for different content of mixed phases. When ΔE was 0.498 eV, the highest photocurrent density (Jsc) was obtained. The power conversion efficiency was increased from 3.23% (without any treatment) to 8.54%. Therefore, the authors demonstrated that the optimized content of the mixed phases is critical to device performance.

The exaggerated grain growth, anisotropic crystallite morphology, and thermal expansion are the main reasons for the microcracking of sintered TiB2, wherein grain coarsening and anisotropic crystallite morphology are believed to be controlled by the surface stabilities of TiB2. To deeply understand the grain growth mechanism, the anisotropic stability and bonding features of TiB2 surfaces, including $\left( {11\bar 20} \right)$ , two types of (0001), and three types of $\left( {10\bar 10} \right)$ , are investigated by first-principles calculations. By employing the two-region modeling method, surface energies are calculated and the $\left( {11\bar 20} \right)$ surface is found to be more stable than (0001) and $\left( {10\bar 10} \right)$ surfaces. Hexagonal plate-like grain morphology is predicted. The different bonding conditions of surface Ti and B atoms contribute to the difference of surface structure relaxation between surfaces with Ti- and B-termination, which lead the B-terminated ones to be more stable. It is also found that the surface energies of TiB2 are much higher than those of ZrB2 with a similar structure, which may be responsible for the easy coarsening of TiB2.

In this article, a comprehensive investigation on the thermal properties of Yb3Al5O12 is conducted, including Debye temperature, thermal expansion coefficient (TEC), thermal diffusivity, heat capacity, and thermal conductivity. The calculated Debye temperature of Yb3Al5O12 from the measured elastic properties is 625 K. The linear and volumetric thermal expansions of Yb3Al5O12 from 298 to 1273 K are (7.83 ± 0.14) × 10−6 and (23.74 ± 0.42) × 10−6 K−1, respectively. The linear TEC of the polycrystalline bulk Yb3Al5O12 determined by dilatometer is (8.22 ± 0.3) × 10−6 K−1. The measured thermal conductivities of Yb3Al5O12 are 4.67 and 2.05 W (m K)−1, respectively, at 300 and 1400 K. The estimated minimum thermal conductivity, κmin, is 1.22 W (m K)−1. The high temperature thermal conductivity is close to the evaluated κmin, which is lower than most commonly used thermal barrier coating (TBC) material such as Y2O3-stabilized-ZrO2 (YSZ). The unique combination of these properties renders Yb3Al5O12 being a very promising candidate material for TBC.

Highly oriented copper nanowires were electrochemically synthesized in a porous alumina membrane template using a new type of weak-acid electrolyte. The Cu nanowires that were deposited have (110) preferred orientation, which is different from most electrochemically deposited Cu nanowires, and they can grow homogeneously. Transmission electron microscopy was used to investigate the room-temperature oxidation behavior, and it was observed that sample treatment methods greatly influence the oxidation rate of the wires. Cu nanowires with different diameters have different resistance to oxidation. The orientation relationship between oxide layer and small-diameter Cu nanowire was determined to be (001) Cu2O // (111) Cu, (110) Cu2O // (110) Cu, and [110] Cu2O // [112] Cu. The possible oxidation process is also discussed.