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A Thermomechanical Approach to the Formation of Dark Defects in High Power Laser Diodes

Published online by Cambridge University Press:  31 January 2011

Alonso Martín-Martín ,
Pilar Iñiguez ,
Juan Jimenez ,
Myriam Oudart  and
Julien Nagle
Alonso Martín-Martín
Affiliation:
alonsomm@libra.uva.es, Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain
Pilar Iñiguez
Affiliation:
piluca@fta.uva.es, Spain
Juan Jimenez
Affiliation:
jimenez@fmc.uva.es, University of Valladolid, Paseo de Belén, 1, Valladolid, 47011, Spain
Myriam Oudart
Affiliation:
myriam.oudart@3-5lab.fr, Alcatel-Thales, Palaiseau, France
Julien Nagle
Affiliation:
julien.nagle@thalesgroup.com, Thales Research & Technology, Palaiseau, France
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Abstract

A thermomechanical model to explain the formation of dark defects in AlGaAs high power laser bars is presented. The local heating at facet defects due to nonradiative recombination and self-absorption of photons induces thermal stresses capable of producing a local plastic deformation and subsequent degradation of the device. The output power density thresholds calculated are in agreement with the data reported in the literature for these lasers.

Keywords

laserthermal stressesdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B02-04
Copyright
Copyright © Materials Research Society 2010

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