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Published online by Cambridge University Press: 01 February 2011
The compounds Mg2X (where X=Si, Ge, Sn) crystallize in the antifluorite structure. They possess properties that are similar to that of the group IV elemental semiconductors thus they have long been recognized as good candidates for thermoelectric applications. In addition, their properties can be readily tuned by doping or alloying. However, optimal performance of these materials requires continued investigation. We present low-temperature transport properties measurements of Sb doped Mg2X. Structure-property relationships are reported while their thermoelectric properties are investigated systematically in order to elucidate their potential as thermoelectric materials.