Hostname: page-component-54dcc4c588-xh45t Total loading time: 0 Render date: 2025-09-26T13:10:54.821Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and Etching of Conformal Boron Films for Neutron Detector Applications

Published online by Cambridge University Press:  07 March 2011

Nicholas LiCausi ,
Justin Clinton ,
Yaron Danon ,
James J.-Q. Lu  and
Ishwara B. Bhat
Nicholas LiCausi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Justin Clinton
Affiliation:
Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Yaron Danon
Affiliation:
Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
James J.-Q. Lu
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Ishwara B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Get access

Abstract

In this work, the deposition of boron using low pressure chemical vapor deposition (LPCVD) has been investigated on planar and deep reactive ion etched (DRIE) Si substrates. Deposition rate and conformal coverage have been studied. Additional studies of “dry” RIE etching and “wet” chemical etching of the deposited boron films are presented. Deposition rates as high as 1 μm/hr and conformal coverage ratios of ~80% have been achieved. Etching rates for various methods studied range widely from 0.35 μm/hr to 1.2 μm/min.

Keywords

Bchemical vapor deposition (CVD) (deposition)reactive ion etching

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc07-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Shultis, J.K. and McGregor, D. S., IEEE Transactions on Nuclear Science 53, 3 (2006).Google Scholar
2. Nikolic, R.J., Conway, A.M., Reinhart, C.E., Graff, R.T., Wang, T.F., Deo, N. and Li Cheung, B.C., Appl. Phys. Lett. 93, 133502 (2008).Google Scholar
3. Dingley, J., LiCausi, N., Danon, Y., Lu, J.-Q. and Bhat, I., 2009 International Conference on Advances in Mathematics, Computational Methods, and Reactor Physics, Saratoga Springs, NY, May 2009.Google Scholar
4. LiCausi, N., Dingley, J., Danon, Y., Lu, J.-Q. and Bhat, I.B., Proc. SPIE 7079, 707908 (2008).Google Scholar
5. Raupp, G.B. and Cale, T. S., Mat. Res. Soc. Symp. Proc. 334, 471 (1994).Google Scholar
6. Voss, L.F., Reinhardt, C. E., Graff, R.T., Conway, A.M., Nikolić, R.J., Deo, N. and Cheung, C.L., J. Electron. Mater. 39, 263 (2010).Google Scholar
7. CRC Handbook of Chemistry and Physics, 91st Edition, Internet Version, edited by Haynes, W.M. (CRC Press, Cleveland, OH, 2010), sec. 4, p. 53.Google Scholar
8. Nakamura, T. and Kamath, S.M., Mech. Mater. 13, 67 (1992).Google Scholar
9. Holcombe, C.E. Jr., Smith, D.D., Lorc, J.D., Duerlesen, W.K. and Carpenter, D.A., High Temp. Sci. 5, 349 (1973).Google Scholar
10. Okada, Y. and Tokumaru, Y., J. Appl. Phys. 56, 314 (1984).Google Scholar