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Annealing of Defects During the Deposition of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

N. Hata ,
P. Roca i Cabarrocas ,
N. Wyrsch ,
S. Wagner  and
M. Favre
N. Hata
Affiliation:
Princeton University, Princeton, NJ 08544
P. Roca i Cabarrocas
Affiliation:
Princeton University, Princeton, NJ 08544
N. Wyrsch
Affiliation:
Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Princeton, NJ 08544
M. Favre
Affiliation:
University of Neuchâtel, Neuchatel, Switzerland
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Abstract

The thickness dependence of the sub-gap optical absorption in plasma-deposited hydrogenated amorphous silicon is carefully studied by photo-thermal deflection spectroscopy. The deep-level defect concentration decays from the top surface into the bulk where it approaches the thermal equilibrium defect density. This defect profile is interpreted in terms of the annealing, during growth, of growth-induced surface defects. It is also shown that the defect profile is compatible with the known growth-temperature dependence of the average defect density in amorphous silicon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 615
Copyright
Copyright © Materials Research Society 1990

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References

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