Hostname: page-component-857557d7f7-gtc7z Total loading time: 0.001 Render date: 2025-12-07T09:58:57.989Z Has data issue: false hasContentIssue false
  • English
  • Français

Monocrystal Dislocationless Si :Ge, Grown from The Melt With Gd Impurity.

Published online by Cambridge University Press:  21 February 2011

Borschensky V.V. ,
Brinkevich D.I. ,
Petrov V.V.  and
Prosolovch V.S.
Borschensky V.V.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Brinkevich D.I.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Petrov V.V.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Prosolovch V.S.
Affiliation:
Byeloruassian State University, Department of Physic, Soorina Avenue, 4, 220080 Minsk, Republic Belarus
Get access

Abstract

The properties of Si grown from the melt having impurities of germanium and gadolinium have been studied by IR-absorption and Hall effect methods.It was stated that Ge and Gd are effective getters for technological impurities of oxygen and carbon in silicon melt. It has been shown that the combined doping by rare earth and isovalent impurities allows to increase the thermostability of dislocationless monocrystals of silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 73
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Dutov, A.G., Karpov, Yu.A., Komar, V.A., Petrov, V.V., Prosolovich, V.S., Turovsky, B.M., Chesnokov, S.A., Yankovsky, Yu.N. Izv. AN SSSR. Neorgan.mat. 25,1589, (1989).Google Scholar
2. Babitsky, Yu.M., Gorbacheva, N.I., Grinshtein, P.M., Ilyin, M.A., Milvidsky, M.G., Turovsky, B.M.. Fiz. Tekhn. Poluprovodn..18,1309, (1984).Google Scholar
3. Brinkevioh, D.I., Gorbacheva, N.I., Petrov, V.V., Prosolo-vich, V.S., Turovsky, B.M. Isv.AN SSSR.Neorgan.mat. 25, 1376,(1989).Google Scholar
4. Bochkarev, E.P., Grishin, V.P., Karpov, Yu.A., Mamrnina, M.I.- Properties of doped semiconductors.(Nauka,Moskow, 1977)p.88.Google Scholar
5. Kaiser, W., Frisch, H.L., Reiss, H..Phys.Rev. 112,1546, 1958.Google Scholar
6. Kanamori, A., Kanamori, M..J.Appl.Phys. 50,8095,(1979).Google Scholar
7. Bean, A.R., Newman, R.C..J.Phys.Chem.Sol. 33,255,(1972).Google Scholar
8. Markevich, V.P., Murin, L.I..Phys.Stat.Sol.(a),111,K149,(1989).Google Scholar