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Heat Spreader Characteristics Of Multilayer Diamond Films For High Frequency Power Devices

Published online by Cambridge University Press:  10 February 2011

B. Ramaswami  and
K. Jagannadham
B. Ramaswami
Affiliation:
Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7916, Jag@mat.mte.ncsu.edu
K. Jagannadham
Affiliation:
Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7916, Jag@mat.mte.ncsu.edu
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Abstract

Single layer diamond and multilayer diamond films consisting of diamond and aluminum nitride are deposited on molybdenum and silicon nitride substrates. Silicon or GaAs device wafers and the diamond substrates are prepared by metallization and bonded using gold-tin eutectic solder. Results of characterization of the bond by thermal cycling, scanning electron microscopy of the cross-section samples and X-ray mapping of the distribution of different elements are presented. Advantages of use of multilayer diamond composite heat spreaders in power semiconductor devices are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 69
Copyright
Copyright © Materials Research Society 1998

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