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Stability of tantalum nitride thin film resistors

Published online by Cambridge University Press:  31 January 2011

C. L. Au ,
W. A. Anderson ,
D. A. Schmitz ,
J. C. Flassayer  and
F. M. Collins
C. L. Au
Affiliation:
Ohmtek, Inc., 2160 Liberty Drive, Niagara Falls, New York 14304
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, New York 14260
D. A. Schmitz
Affiliation:
Ohmtek, Inc., 2160 Liberty Drive, Niagara Falls, New York 14304
J. C. Flassayer
Affiliation:
Ohmtek, Inc., 2160 Liberty Drive, Niagara Falls, New York 14304
F. M. Collins
Affiliation:
Ohmtek, Inc., 2160 Liberty Drive, Niagara Falls, New York 14304
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Abstract

Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about −140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 Å polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 6 , June 1990 , pp. 1224 - 1232
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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