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Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

M. Iqbal Chaudhry  and
Robert L. Wright
M. Iqbal Chaudhry
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
Robert L. Wright
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
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Abstract

In this paper we report the growth of β–SiC films on Si(100) substrates by low-temperature chemical vapor deposition. Single crystals of β–SiC are grown at temperatures as low as 1150 °C. Low-temperature growth β–SiC is achieved using a SiH4–C3H8–H2–Ar gas system. The growth rate of films grown at 1150 °C is 1 μm/h. Transmission electron microscopy and x-ray diffraction results indicate that the β-SiC films grown at and above 1150 °C are single crystals. Films grown at temperatures lower than 1150 °C are polycrystalline.

Type
Materials Communications
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1595 - 1598
Copyright
Copyright © Materials Research Society 1990

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