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Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates

Published online by Cambridge University Press:  31 January 2011

J.M. Yuk ,
J.Y. Lee ,
T.W. Kim ,
D.I. Son  and
W.K. Choi
J.M. Yuk
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
J.Y. Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
T.W. Kim*
Affiliation:
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
D.I. Son
Affiliation:
Department of Information Display Engineering, Hanyang University, Seoul 133-791, Korea
W.K. Choi
Affiliation:
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul 136-701, Korea
*
a)Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

Transmission electron microscopy (TEM) images, selected-area electron-diffraction patterns, high-resolution TEM images, and x-ray energy dispersive spectroscopy line scans for the ZnO/n-Si (001) heterostructures annealed at 900 °C showed that stacking faults and amorphous layers were formed in the lower region of the ZnO films. The stacking faults existing in the lower region of the ZnO columnar grains originated from the formation of zinc vacancy layers caused by the thermal treatment, resulting in the existence of a tensile strain. The formation of the amorphous layer in the ZnO film was attributed to the accumulation of zinc vacancy layers.

Keywords

AnnealingTransmission electron microscopy (TEM)Microstructure
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 1082 - 1086
Copyright
Copyright © Materials Research Society 2008

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