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H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system

Published online by Cambridge University Press:  31 January 2011

Benji Maruyama  and
Fumio S. Ohuchi
Benji Maruyama
Affiliation:
Naval Research Laboratory, Code 6371, 4555 Overlook Avenue SW, Washington, DC 20375–5000
Fumio S. Ohuchi
Affiliation:
E.I. duPont de Nemours Co., Central Research and Development, Wilmington, Delaware 19880–0304
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Abstract

Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

Type
Materials Communications
Information
Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1131 - 1134
Copyright
Copyright © Materials Research Society 1991

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