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A Q-/V-band 37.6-dBm IP0.1 dB and low loss SPDT switch using three-series PIN diodes connection
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 17 / Issue 4 / May 2025
- Published online by Cambridge University Press:
- 28 July 2025, pp. 731-739
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- Article
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This manuscript presents a novel three-series-only topology P-insulator-N (PIN) diode single-pole-double-through (SPDT) switch designed to address the challenges of high power handling and low insertion loss in Q-band and V-band communication systems. The manuscript provides a detailed theoretical analysis of series-connected PIN diodes, offering insights into their behavior under both small- and large-signal conditions. Based on GaAs PIN diode technology, the switch operates across a frequency range of 37.7 to 61 GHz, achieving a low insertion loss of 0.707 dB and providing an isolation of 24.6 dB. The proposed SPDT switch demonstrates a high
$\text{IP}_{\text{0.1~dB}}$ of 37.6 dBm at 38 GHz. With a compact chip size of 
$0.905\times 0.885 \text{mm}^2$, including all pads, this work offers excellent power handling capability, making it highly suitable for advanced communication systems in Q-band and V-band applications.
