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High-Efficiency Dye-Sensitized Solar Cell Based on ZnO Nanorod Arrays Electrode

Published online by Cambridge University Press:  26 February 2011

Patcharee Charoensirithavorn  and
Susumu Yoshikawa
Patcharee Charoensirithavorn
Affiliation:
patchare@iae.kyoto-u.ac.jp, Molecular Assemblies Design Research Section, Institute of Advance Energy, Kyoto University, Uji, Kyoto, 6110011, Japan, 0774-38-3504, 0774-38-3508
Susumu Yoshikawa
Affiliation:
s-yoshi@iae.kyoto-u.ac.jp, Kyoto University, Institute of Advanced Energy, Uji, Kyoto, 6110011, Japan
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Abstract

We have fabricated transparent ZnO nanorod arrays on the fluorine-doped SnO2 transparent conducting oxide (FTO) glass substrates and used them as the wide band gap semiconductor in dye-sensitized solar cells. Our objectives are to introduce and demonstrate new possibilities in designing the semiconductor morphology. The best performance with this cell structure produced an open circuit voltage (Voc) of 0.64 mV, a short circuit current density (Jsc) of 5.37 mA/cm2, a fill factor (FF) of 0.49, and a conversion efficiency (η) of 1.69 %, primarily limited by the surface area of the nanorod array.

Keywords

Znsolution depositionnanostructure

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 974: Symposium CC – Solar Energy Conversion , 2006 , 0974-CC07-10
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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