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GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process

Published online by Cambridge University Press:  13 March 2015

Nazmul Arefin ,
Matthew H. Kane ,
Preston R. Larson ,
Vince R. Whiteside ,
Khalid Hossain ,
Brittany N. Pritchett ,
Matthew B. Johnson  and
Patrick J. McCann
Nazmul Arefin
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019
Matthew H. Kane
Affiliation:
Marine Engineering Technology, Texas A&M University at Galveston, Galveston, TX 77573 Materials Science and Engineering, Texas A&M University, College Station, TX 77843
Preston R. Larson
Affiliation:
Samuel Roberts Noble Microscopy Laboratory, Norman, OK 73019
Vince R. Whiteside
Affiliation:
Dept. of Physics and Astronomy, University of Oklahoma, Norman, OK 73019
Khalid Hossain
Affiliation:
Amethyst Research Inc., Ardmore, OK 73401
Brittany N. Pritchett
Affiliation:
Mewbourne College of Earth and Energy, University of Oklahoma, Norman, OK 73019
Matthew B. Johnson
Affiliation:
Dept. of Physics and Astronomy, University of Oklahoma, Norman, OK 73019
Patrick J. McCann
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019
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Abstract

Growth of GaN on Si(111) and Ge coated Si(111) using pulsed electron beam deposition (PED) process is reported. GaN was deposited on Si(111) and Ge/Si(111) at 600°C in an N2 environment without any surface pre-treatment such as pre-nitridation. X-ray diffraction confirmed that c-plane oriented GaN was grown. Photoluminescence showed near-band-edge emission, the intensity of which was improved with hydrogen passivation. Electrical characterization showed n-type conductivity with room temperature electron mobilities in the range of 300 cm2/V-sec.

Keywords

thin filmnitrideplasma deposition

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Type
Articles
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MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t13-02
Copyright
Copyright © Materials Research Society 2015 

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