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Charging and Aging Effects in Porous ULK Dielectrics

Published online by Cambridge University Press:  01 February 2011

Cyril Guedj ,
Eugenie Martinez  and
Gregory Imbert
Cyril Guedj
Affiliation:
cguedj@cea.fr, LETI-Minatec, D2NT, 17, Rue des Martyrs, Grenoble, 38540, France, 0033438789105
Eugenie Martinez
Affiliation:
Martinezeu@cea.fr, Minatec, CEA-LETI, 17, Rue des Martyrs, Grenoble, 38540, France
Gregory Imbert
Affiliation:
gregory.Imbert@st.com, STMicroelectronics, 850, Rue Jean Monnet, Crolles, 38926, France
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Abstract

The down-scaling of CMOS interconnects increases dielectric reliability challenges. Porous ULK materials used in advanced interconnects may suffer from charge trapping and detrimental aging during bias-thermal stress experiments. We demonstrate that a threshold between charging and aging domains may occur for an injected electrical energy of 0.1 MJ/cm3. Electron injection in the dielectric induces hydrogen radical formation first. For more damaging current stressing, in-situ Auger experiments demonstrate that the degradation is mostly due to the modification around carbon bonds.

Keywords

electrical propertiesdielectricAuger electron spectroscopy (AES)

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References

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